Zhang Zhen, Zhou Menglian, Zhang Jianmin, et al. Entirely saturated unilateral smear of laser spot in CCD[J]. High Power Laser and Particle Beams, 2013, 25: 1351-1353. doi: 10.3788/HPLPB20132506.1351
Citation:
Zhang Zhen, Zhou Menglian, Zhang Jianmin, et al. Entirely saturated unilateral smear of laser spot in CCD[J]. High Power Laser and Particle Beams, 2013, 25: 1351-1353. doi: 10.3788/HPLPB20132506.1351
Zhang Zhen, Zhou Menglian, Zhang Jianmin, et al. Entirely saturated unilateral smear of laser spot in CCD[J]. High Power Laser and Particle Beams, 2013, 25: 1351-1353. doi: 10.3788/HPLPB20132506.1351
Citation:
Zhang Zhen, Zhou Menglian, Zhang Jianmin, et al. Entirely saturated unilateral smear of laser spot in CCD[J]. High Power Laser and Particle Beams, 2013, 25: 1351-1353. doi: 10.3788/HPLPB20132506.1351
In the video of linear CCD camera being irradiated by 532 nm CW laser, the entirely saturated unilateral smear of laser spot was found. The smear area does not represent the distribution of laser. Since this smear lies merely in one side of laser spot, it can not be induced by light leaking or carriers blooming, and it may be induced by charge transfer loss. However, the feature that the smear area is entirely saturated can not be explained by the current constant model of charge transfer inefficiency. Based on the inner structure and operating principle of buried channel CCD, a new model of charge transfer inefficiency that varies with charge quantity is proposed, which can explain the entirely saturated unilateral smear of laser spot.