Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

Low temperature (LT) InGaAs materials were grown by gas source molecular beam epitaxy, and the influence of growth temperature as well as arsenic pressure on InGaAs material properties was studied. The optimized deposition conditions were established with the growth temperature of 300 ℃ and the arsenic pressure of 77.3 kPa. By using the structure of In0.52Al0.48As/In0.53Ga0.47As multiple quantum well and doping with Be into InGaAs layers, the resistance of LT-InGaAs material was increased to 1.632106 /Sq, and the carrier concentration was reduced to 1.0581014 cm-3. X-ray diffraction measurements show that LT-InGaAs multiple quantum wells have perfect crystal quality. This multiple quantum well material doped with Be has high trap density and high resistivity, which is suitable material for THz photoconductive antennas.