ChenYongdong, Xie Hongquan, Li Zhenghong, et al. Effect of returning electrons on stability of relativistic klystron amplifier[J]. High Power Laser and Particle Beams, 2013, 25: 1770-1774. doi: 10.3788/HPLPB20132507.1770
Citation:
ChenYongdong, Xie Hongquan, Li Zhenghong, et al. Effect of returning electrons on stability of relativistic klystron amplifier[J]. High Power Laser and Particle Beams, 2013, 25: 1770-1774. doi: 10.3788/HPLPB20132507.1770
ChenYongdong, Xie Hongquan, Li Zhenghong, et al. Effect of returning electrons on stability of relativistic klystron amplifier[J]. High Power Laser and Particle Beams, 2013, 25: 1770-1774. doi: 10.3788/HPLPB20132507.1770
Citation:
ChenYongdong, Xie Hongquan, Li Zhenghong, et al. Effect of returning electrons on stability of relativistic klystron amplifier[J]. High Power Laser and Particle Beams, 2013, 25: 1770-1774. doi: 10.3788/HPLPB20132507.1770
Several factors causing electrons to return, e. g. the voltage and current of electron beam, the injected power of microwave are studied in relativistic klystron amplifier (RKA). In PIC simulation, we find that high injected power, high beam current and low beam voltage all can cause the return of electrons. Moreover the effect of returning electrons on the stability of RKA is studied, which shows that returning electrons will lead to self-excited oscillation of RKA and to the fail of locking of phase and frequency, and thus the device can not work stably.