Charge collection properties of a 4H-SiC Schottky diode

A Schottky barrier diode was made using 4H-SiC wide band gap material, both radiation resistance and temperature resistance of which are excellent due to its intrinsic properties. The charge collection properties of the 4H-SiC Schottky barrier diode were investigated by irradiating the diode with alpha particles from 241Am source. The net dopant concentration, 1.991015/cm3, are inferred from the capacitane-voltage curve. From the current-voltage curve, the barrier height and the ideality factor are found to be 1.66 eV and 1.07, respectively, indicating the main current transportation process of the diode is thermal electron emission. Under the reverse bias at 700 V, the diode has a leakage current of 21 nA, exhibiting a relatively high breakdown voltage. The charge collection properties of the diode to 3.5 MeV alpha particles were investigated at the reverse bias in the range of 0-350 V. The values of charge collection efficiency at 0 V and 150 V are 48.7% and 99.4%, respectively, indicating excellent charge collection properties of 4H-SiC Schottky diode.