Ma Xun, Deng Jianjun, Jiang Ping, et al. Design of stacked Blumlein PFNs with photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2013, 25: 1851-1855. doi: 10.3788/HPLPB20132507.1851
Citation:
Ma Xun, Deng Jianjun, Jiang Ping, et al. Design of stacked Blumlein PFNs with photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2013, 25: 1851-1855. doi: 10.3788/HPLPB20132507.1851
Ma Xun, Deng Jianjun, Jiang Ping, et al. Design of stacked Blumlein PFNs with photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2013, 25: 1851-1855. doi: 10.3788/HPLPB20132507.1851
Citation:
Ma Xun, Deng Jianjun, Jiang Ping, et al. Design of stacked Blumlein PFNs with photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2013, 25: 1851-1855. doi: 10.3788/HPLPB20132507.1851
A stacked Blumlein pulse forming network(B-PFN) was designed to drive repetitive high-Z X-ray diode. Numerical simulation was adopted to optimize the system parameters, through which inductance design principle was aquired. B-PFN performance was analyzed from several aspects: consistency of charging voltage, distortion of output wave, efficiency of stacked voltage and amplitude of load pre-pulse. Experiments showed that the single B-PFN voltage efficiency was 0.71, the two-stage stacked voltage efficiency was 0.96, when PCSS electric field was 23.2 kV/cm and trigger laser energy was 3.5 mJ.
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