Li Yong, Xuan Chun, Xie Haiyan, et al. Response of PIN diode to electromagnetic pulse[J]. High Power Laser and Particle Beams, 2013, 25: 2061-2066. doi: 10.3788/HPLPB20132508.2061
Citation:
Li Yong, Xuan Chun, Xie Haiyan, et al. Response of PIN diode to electromagnetic pulse[J]. High Power Laser and Particle Beams, 2013, 25: 2061-2066. doi: 10.3788/HPLPB20132508.2061
Li Yong, Xuan Chun, Xie Haiyan, et al. Response of PIN diode to electromagnetic pulse[J]. High Power Laser and Particle Beams, 2013, 25: 2061-2066. doi: 10.3788/HPLPB20132508.2061
Citation:
Li Yong, Xuan Chun, Xie Haiyan, et al. Response of PIN diode to electromagnetic pulse[J]. High Power Laser and Particle Beams, 2013, 25: 2061-2066. doi: 10.3788/HPLPB20132508.2061
Northwest Institute of Nuclear Technology,Xi’an 710024,China; 2.School of Electronic and Information Engineering,Xi’an Jiaotong University,Xi’an 710049,China
To study the effect of PIN diode limiter under electromagnetic pulse (EMP), the response of PIN diode is numerically simulated by using self-developed 2D semiconductor device simulation software. Current overshoot phenomena of PIN diode during the rise time of EMP are analyzed. Overshoot current is validated to be due to the capacitive performance of PIN diode under high frequency. Shorter rise time of EMP causes higher peak of current. Overshoot current is affected by doping concentration of PIN diode. The higher doping concentration of the P layer and N layer causes higher peak of current and sooner attenuation of overshoot current. The doping concentration of the I layer also affects the overshoot current, but not as the salient as concentration of the P and N layers.
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