Wang Xiaohu, Yang Zhen, Zhang Linwen, et al. An ion beam profiler based on secondary electron emission[J]. High Power Laser and Particle Beams, 2013, 25: 2121-2124. doi: 10.3788/HPLPB20132508.2121
Citation:
Wang Xiaohu, Yang Zhen, Zhang Linwen, et al. An ion beam profiler based on secondary electron emission[J]. High Power Laser and Particle Beams, 2013, 25: 2121-2124. doi: 10.3788/HPLPB20132508.2121
Wang Xiaohu, Yang Zhen, Zhang Linwen, et al. An ion beam profiler based on secondary electron emission[J]. High Power Laser and Particle Beams, 2013, 25: 2121-2124. doi: 10.3788/HPLPB20132508.2121
Citation:
Wang Xiaohu, Yang Zhen, Zhang Linwen, et al. An ion beam profiler based on secondary electron emission[J]. High Power Laser and Particle Beams, 2013, 25: 2121-2124. doi: 10.3788/HPLPB20132508.2121
Institute of Fluid Physics,CAEP,P.O.Box 919-106,Mianyang 621900,China;
2.
Key Subject Laboratory of National Defense for Radioactive Waste and Environmental Security,Southwest University of Science and Technology,Mianyang 621010,China
The principle of an ion beam profiler based on SEE（secondary electron emission） is introduced. For ion beams with energy of several tens of keV, an ion beam profiler prototypewith sensitive area of 16 mm16 mm is constructed. The prototype only consists of an HV plane made of a metal mesh and a signal plane made of a printed circuit board (PCB). By test with an ECR source, the system shows very good linearity between the output signal and the intensity of the ion beam, and can obtain a one dimensional beam profile with a position resolution of 2 mm.
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