Lin Shu, Li Yongdong, Wang Hongguang, et al. Scaled model for simulating opening process of semiconductor opening switches[J]. High Power Laser and Particle Beams, 2013, 25: 2341-2345. doi: 10.3788/HPLPB20132509.2341
Citation:
Lin Shu, Li Yongdong, Wang Hongguang, et al. Scaled model for simulating opening process of semiconductor opening switches[J]. High Power Laser and Particle Beams, 2013, 25: 2341-2345. doi: 10.3788/HPLPB20132509.2341
Lin Shu, Li Yongdong, Wang Hongguang, et al. Scaled model for simulating opening process of semiconductor opening switches[J]. High Power Laser and Particle Beams, 2013, 25: 2341-2345. doi: 10.3788/HPLPB20132509.2341
Citation:
Lin Shu, Li Yongdong, Wang Hongguang, et al. Scaled model for simulating opening process of semiconductor opening switches[J]. High Power Laser and Particle Beams, 2013, 25: 2341-2345. doi: 10.3788/HPLPB20132509.2341
A scaled model is presented to simulate the opening process of semiconductor opening switches (SOSs), which can be used in Silvaco ATALAS code. The model scales all external circuit components with the same proportion and keeps physics in SOSs well. Using various equivalent SOSs with different scales of cross section to represent the original 100 SOSs in series, the simulations get the same output pulses for each diode in all cases. It is verified that the model can not only simulate the opening process of the SOS correctly, but also speed up the computation by almost one hundred times. From the evolution of carrier density distribution and electric field distribution, it can be found that the opening process starts in the n-n+ area.