Influencing factors of SiGe heterojunction bipolar transistor single-event effect in laser microbeam simulation test

doi: 10.3788/HPLPB20132509.2433

• Zhang Jinxin^{1,2,4 ,  ,}  , 
• Guo Hongxia^1,2,3 , 
• Wen Lin^1,2,4 , 
• Guo Qi^1,2 , 
• Cui Jiangwei^1,2 , 
• Fan Xue⁵ , 
• Xiao Yao³ , 
• Xi Shanbin^1,2,4 , 
• Wang Xin^1,2,4 , 
• Deng Wei^1,2,4

• 1.

  Xinjiang Technical Institute of Physics &Chemistry,Chinese Academy of Sciences,Urumqi 830011,China;

• 2.

  Xinjiang Key Laboratory of Electronic Information Materials and Devices,Urumqi 830011,China;

• 3.

  Northwest Institute of Nuclear Technology,Xi’an 710024,China;

• 4.

  University of Chinese Academy of Sciences,Beijing 100049,China;

• 5.

  State Key Laboratory of Electronic Thin Films and Integrated Device,University of Electronic Science and Technology of China,Chengdu 610054,China