Fan Xiaoqiang, Jiang Yong, Zhan Changyong, et al. Study on morphology of silicon macropore array[J]. High Power Laser and Particle Beams, 2013, 25: 2439-2442. doi: 10.3788/HPLPB20132509.2439
Citation:
Fan Xiaoqiang, Jiang Yong, Zhan Changyong, et al. Study on morphology of silicon macropore array[J]. High Power Laser and Particle Beams, 2013, 25: 2439-2442. doi: 10.3788/HPLPB20132509.2439
Fan Xiaoqiang, Jiang Yong, Zhan Changyong, et al. Study on morphology of silicon macropore array[J]. High Power Laser and Particle Beams, 2013, 25: 2439-2442. doi: 10.3788/HPLPB20132509.2439
Citation:
Fan Xiaoqiang, Jiang Yong, Zhan Changyong, et al. Study on morphology of silicon macropore array[J]. High Power Laser and Particle Beams, 2013, 25: 2439-2442. doi: 10.3788/HPLPB20132509.2439
Institute of Nuclear Physics and Chemistry,CAEP,P.O.Box 919-210,Mianyang 621900,China;
2.
Key Laboratory of Radiation and Technology of Education Ministry of China,Institute of Nuclear Science and Technology,Sichuan University,Chengdu 610064,China;
3.
Luoyang Ship Material Research Institute,Luoyang 471039,China
Silicon macropore arrays were prepared by electrochemical etching in the solution of HF+IPA (isopropanol) and HF+IPA+CATC (cetyltrimethylammonium chloride). The effects of HF concentration, CTAC, etching current, etching time on the array morphologies were discussed. The optimized macropore array was obtained when the volume ratio of 40%HF, H2O,IPA is 7∶4∶29. The pore wall is decreased with increasing the etching current and the initial etching expands in the direction of pore diameter until the pore diameter of about 10 m. Regular arrays are not formed on the silicon with etching windows of 8 m and spacing of 5 m. Small pores are formed on macropore walls when CTAC is added in the solution. The small pores become smaller and the number of them is increased with increasing CTAC.
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