Li Hui, Qu Yi, Zhang Jianjia, et al. High power 905 nm InGaAs tunnel junction series stacked semiconductor lasers[J]. High Power Laser and Particle Beams, 2013, 25: 2517-2520. doi: 10.3788/HPLPB20132510.2517
Citation:
Li Hui, Qu Yi, Zhang Jianjia, et al. High power 905 nm InGaAs tunnel junction series stacked semiconductor lasers[J]. High Power Laser and Particle Beams, 2013, 25: 2517-2520. doi: 10.3788/HPLPB20132510.2517
Li Hui, Qu Yi, Zhang Jianjia, et al. High power 905 nm InGaAs tunnel junction series stacked semiconductor lasers[J]. High Power Laser and Particle Beams, 2013, 25: 2517-2520. doi: 10.3788/HPLPB20132510.2517
Citation:
Li Hui, Qu Yi, Zhang Jianjia, et al. High power 905 nm InGaAs tunnel junction series stacked semiconductor lasers[J]. High Power Laser and Particle Beams, 2013, 25: 2517-2520. doi: 10.3788/HPLPB20132510.2517
National Key Laboratory of Science and Technology on High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China
We designed the structure of tunnel junction series stacked semiconductor lasers and grew the laser materials by molecular beam epitaxy (MBE). We fabricated the 200 m wide, 800 m cavity length laser diode chips by the process of photo-lithography, etching, Ohmic contact, cleaving, AR/HR coating and die bonding. The output power of the two-tunnel-junction device reaches 80 W under the condition of 100 ns pulsed width, 10 kHz repeat frequency, and 30 A pulsed current. The threshold current is about 0.8 A, the peak of spectrum is 905.6 nm, and the far-field divergence in the directions parallel to junction plane and perpendicular to junction plane is 7.8 and 25, respectively.
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