Wang Hairong, Xiao Shali, Yang Qingguo, et al. Transient X-ray diffraction to diagnose elastic deformation of shocked lithium fluoride single crystal[J]. High Power Laser and Particle Beams, 2014, 26: 024004. doi: 10.3788/HPLPB201426.024004
Citation: Li Hui, Qu Yi, Zhang Jianjia, et al. High power 905 nm InGaAs tunnel junction series stacked semiconductor lasers[J]. High Power Laser and Particle Beams, 2013, 25: 2517-2520. doi: 10.3788/HPLPB20132510.2517

High power 905 nm InGaAs tunnel junction series stacked semiconductor lasers

doi: 10.3788/HPLPB20132510.2517
  • Received Date: 2012-12-13
  • Rev Recd Date: 2013-06-17
  • Publish Date: 2013-09-22
  • We designed the structure of tunnel junction series stacked semiconductor lasers and grew the laser materials by molecular beam epitaxy (MBE). We fabricated the 200 m wide, 800 m cavity length laser diode chips by the process of photo-lithography, etching, Ohmic contact, cleaving, AR/HR coating and die bonding. The output power of the two-tunnel-junction device reaches 80 W under the condition of 100 ns pulsed width, 10 kHz repeat frequency, and 30 A pulsed current. The threshold current is about 0.8 A, the peak of spectrum is 905.6 nm, and the far-field divergence in the directions parallel to junction plane and perpendicular to junction plane is 7.8 and 25, respectively.
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