High power 905 nm InGaAs tunnel junction series stacked semiconductor lasers

Li Hui; Qu Yi; Zhang Jianjia; Xin Desheng; Liu Guojun

doi:10.3788/HPLPB20132510.2517

Volume 25 Issue 10

Sep. 2013

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Article Navigation > High Power Laser and Particle Beams > 2013 > 25(10): 2517-2520

Xu Gang, Xie Ping, Liao Yong, et al. Frequency response of switched high power mesoband electromagnetic pulse generator[J]. High Power Laser and Particle Beams, 2013, 25: 2363-2367. doi: 10.3788/HPLPB20132509.2363

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Li Hui, Qu Yi, Zhang Jianjia, et al. High power 905 nm InGaAs tunnel junction series stacked semiconductor lasers[J]. High Power Laser and Particle Beams, 2013, 25: 2517-2520. doi: 10.3788/HPLPB20132510.2517

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High power 905 nm InGaAs tunnel junction series stacked semiconductor lasers

doi: 10.3788/HPLPB20132510.2517

1.
National Key Laboratory of Science and Technology on High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China

Received Date: 2012-12-13
Rev Recd Date: 2013-06-17
Publish Date: 2013-09-22

Abstract

Abstract

We designed the structure of tunnel junction series stacked semiconductor lasers and grew the laser materials by molecular beam epitaxy (MBE). We fabricated the 200 m wide, 800 m cavity length laser diode chips by the process of photo-lithography, etching, Ohmic contact, cleaving, AR/HR coating and die bonding. The output power of the two-tunnel-junction device reaches 80 W under the condition of 100 ns pulsed width, 10 kHz repeat frequency, and 30 A pulsed current. The threshold current is about 0.8 A, the peak of spectrum is 905.6 nm, and the far-field divergence in the directions parallel to junction plane and perpendicular to junction plane is 7.8 and 25, respectively.
- high power,
- strained quantum well,
- tunnel junction,
- semiconductor lasers

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