Development of measurement system for radiation effects on synchronous dynamic random access memory

An online measurement system for radiation effects on synchronous dynamic random access memory (SDRAM) is developed on the basis of the analysis of the main failure phenomenon, which can test the function, refresh period and power supply current. The results of an experiment on SDRAM for total ionizing dose effect (TID) show that the TID can cause the decrease in data retention time, the increase in power supply current and the functional failure. For the samples MT48LC8M32B2, its functional failure is caused by the peripheral control circuits, rather than the memory unit upset. Data retention time keeps decreasing with the increase of the total dose, but this is not the directive reason for the functional failure of SDRAM.