Experimental study on heavy-ion single event effect on nanometer DDR SRAM

Luo Yinhong; Zhang Fengqi; Guo Hongxia; Zhou Hui; Wang Yanping; Zhang Keying

doi:10.3788/HPLPB20132510.2705

Volume 25 Issue 10

Sep. 2013

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Article Navigation > High Power Laser and Particle Beams > 2013 > 25(10): 2705-2710

Xu Jing, Zhang He, Zheng Pengfei, et al. Target azimuth measuring method for photoelectric imaging detection system[J]. High Power Laser and Particle Beams, 2013, 25: 574-578. doi: 10.3788/HPLPB20132503.0574

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Luo Yinhong, Zhang Fengqi, Guo Hongxia, et al. Experimental study on heavy-ion single event effect on nanometer DDR SRAM[J]. High Power Laser and Particle Beams, 2013, 25: 2705-2710. doi: 10.3788/HPLPB20132510.2705

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Experimental study on heavy-ion single event effect on nanometer DDR SRAM

doi: 10.3788/HPLPB20132510.2705

1.
Northwest Institute of Nuclear Technology,Xi’an 710024,China

Received Date: 2013-01-29
Rev Recd Date: 2013-04-04
Publish Date: 2013-09-22

Abstract

Abstract

Single event effect experimental study on 90 nm and 65 nm DDR SRAM were carried out, single event upset (SEU) cross section was discussed as a function of several parameters such as feature size, test pattern, incidence angle, supply voltage. Key influence factors and effect rule were analyzed. Feasibility of the current test method was discussed. Results indicate that, SEU cross section reduces as technologies scale down; the influence of test pattern and power supply on SEU cross section is small; tilt angle increases SEU cross section due to multiple upset increasement. The applicability of cosine tilt test method is correlative to ion species and linear energy transfer (LET) values.
- nanometer SRAM,
- single event effect,
- multiple-cell upset,
- test pattern,
- tilt angle

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