In situ stress evolution in magnetron-sputtered Si-based thin films

Li Jingping; Fang Ming; He Hongbo; Shao Jianda; Li Zhaoyang

doi:10.3788/HPLPB20132511.2826

Volume 25 Issue 11

Dec. 2013

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Article Navigation > High Power Laser and Particle Beams > 2013 > 25(11): 2826-2830

Su Jian, Zeng Zhi, Liu Yue, et al. Monte Carlo simulation of muon radiation environment in China Jinping Underground Laboratory[J]. High Power Laser and Particle Beams, 2012, 24: 3015-3018. doi: 10.3788/HPLPB20122412.3015

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Li Jingping, Fang Ming, He Hongbo, et al. In situ stress evolution in magnetron-sputtered Si-based thin films[J]. High Power Laser and Particle Beams, 2013, 25: 2826-2830. doi: 10.3788/HPLPB20132511.2826

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In situ stress evolution in magnetron-sputtered Si-based thin films

doi: 10.3788/HPLPB20132511.2826

1.
Key Laboratory of Materials for High Power Laser,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;
2.
University of Chinese Academy of Sciences,Beijing 100049,China;
3.
Shanghai Institute of Laser Plasma,CAEP,Shanghai 201800,China

Received Date: 2013-03-11
Rev Recd Date: 2013-06-14
Publish Date: 2013-10-28

Abstract

Abstract

An in situ multi-beam optical stress sensor system was used to monitor and analyze the force per unit width and stress evolution during and after the deposition of magnetron-sputtered Si and SiNx films. A rapid stress relaxation, as well as a recovery, was observed in both films. Stress in Si films was reversible, while partial reversible in SiNx films. Physical adsorption and desorption are the main factors responsible for the stress relaxation and recovery. The non-reversible stress component results from chemical adsorption. And a model based on adsorption is proposed to explain the stress relaxation.
- stress relaxation,
- stress recovery,
- physical adsorption,
- chemical adsorption

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