Thermal characteristics of semiconductor laser based on muti-chip packaging

Wang Wen; Chu Jinlei; Gao Xin; Zhang Jing; Qiao Zhongliang; Bo Baoxue

doi:10.3788/HPLPB201426.011015

Volume 26 Issue 01

Jan. 2014

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Article Navigation > High Power Laser and Particle Beams > 2014 > 26(01): 011015

Rao Huanle, Liu Zhengkun, Liu Ying, et al. Cerium oxide polishing to improve uniformity of diffraction efficiencyof beam sampling grating[J]. High Power Laser and Particle Beams, 2013, 25: 1609-1610. doi: 10.3788/HPLPB20132507.1609

Citation:

Wang Wen, Chu Jinlei, Gao Xin, et al. Thermal characteristics of semiconductor laser based on muti-chip packaging[J]. High Power Laser and Particle Beams, 2014, 26: 011015. doi: 10.3788/HPLPB201426.011015

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Thermal characteristics of semiconductor laser based on muti-chip packaging

doi: 10.3788/HPLPB201426.011015

1.
National Key Laboratory on High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China;
2.
Institute of Optoelectronic Technology,China Jiliang University,Hangzhou 310018,China

Received Date: 2013-07-02
Rev Recd Date: 2013-09-22
Publish Date: 2014-01-15

Abstract

Abstract

A hundred-watt semiconductor laser packaged with 12 single strip-type chips divided into 2 groups where each group was set from high to low in ladder form was designed, and its thermal characteristics under steady-state work were analyzed by ANSYS. The temperature of active region of chip packaged with the highest and the lowest Cu heat sinks was obtained by changing the width, spacing and height difference of Cu heat sink, and thus the change rules of the temperature difference were derived. Finally, we designed a relatively ideal heat dissipation structure for hundred-watt semiconductor laser.
- multi-chip,
- semiconductor laser,
- steady-state,
- temperature of active region

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