Thermal characteristics of semiconductor laser based on muti-chip packaging

A hundred-watt semiconductor laser packaged with 12 single strip-type chips divided into 2 groups where each group was set from high to low in ladder form was designed, and its thermal characteristics under steady-state work were analyzed by ANSYS. The temperature of active region of chip packaged with the highest and the lowest Cu heat sinks was obtained by changing the width, spacing and height difference of Cu heat sink, and thus the change rules of the temperature difference were derived. Finally, we designed a relatively ideal heat dissipation structure for hundred-watt semiconductor laser.