Cheng Xiufeng, Xu Mingxia, Liu Baoan, et al. Properties of DKDP crystals grown at different temperature[J]. High Power Laser and Particle Beams, 2014, 26: 012006. doi: 10.3788/HPLPB201426.012006
Citation:
Cheng Xiufeng, Xu Mingxia, Liu Baoan, et al. Properties of DKDP crystals grown at different temperature[J]. High Power Laser and Particle Beams, 2014, 26: 012006. doi: 10.3788/HPLPB201426.012006
Cheng Xiufeng, Xu Mingxia, Liu Baoan, et al. Properties of DKDP crystals grown at different temperature[J]. High Power Laser and Particle Beams, 2014, 26: 012006. doi: 10.3788/HPLPB201426.012006
Citation:
Cheng Xiufeng, Xu Mingxia, Liu Baoan, et al. Properties of DKDP crystals grown at different temperature[J]. High Power Laser and Particle Beams, 2014, 26: 012006. doi: 10.3788/HPLPB201426.012006
Four 60% DKDP crystals were grown at different temperatures using point seed technique. The growing process was observed. The properties including optical transmittance, rocking curve and laser induced damage threshold were measured. The results show that the morphology of crystal grown at high temperature is more perfect than that grown at low temperature. The effect of growth temperature on optical transmittance for these crystals is slight. However, the structure perfection and the laser induced damage threshold decrease with the decrease of growth temperature.