Volume 25 Issue 12
Dec.  2013
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Wen Jing, Zhang Xin, Zhou Wei, et al. Research on isolation ratio limit induced by depolarization in Shenguang-Ⅲ laser facility[J]. High Power Laser and Particle Beams, 2013, 25: 3197-3200. doi: 3197
Citation: Wen Jing, Zhang Xin, Zhou Wei, et al. Research on isolation ratio limit induced by depolarization in Shenguang-Ⅲ laser facility[J]. High Power Laser and Particle Beams, 2013, 25: 3197-3200. doi: 3197

Research on isolation ratio limit induced by depolarization in Shenguang-Ⅲ laser facility

doi: 3197
  • Received Date: 2013-09-11
  • Rev Recd Date: 2013-09-30
  • Publish Date: 2013-12-15
  • Laser depolarization induced by the propagation-rotation structure would greatly affect the isolation ratio of the Shenguang-Ⅲ laser facility. We build a simulation model on the reflectance coefficient of the propagation-rotation structure based on the film system theory, and point out that the depolarization origins from the reflective film thickness error. Through comparison between the simulation result and the off-line experimental result, we obtain the reflectance coefficient of each reflective film inside the propagation-rotation structure. Furthermore, we obtain the total reflectance coefficient of the propagation-rotation structure and then the system isolation ratio limit.
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