li wen-yu, wang jin-bao, cheng xiang-ai, et al. New analysis on laser-induced damage mechanism of array CCD device[J]. High Power Laser and Particle Beams, 2005, 17.
Citation:
li wen-yu, wang jin-bao, cheng xiang-ai, et al. New analysis on laser-induced damage mechanism of array CCD device[J]. High Power Laser and Particle Beams, 2005, 17.
li wen-yu, wang jin-bao, cheng xiang-ai, et al. New analysis on laser-induced damage mechanism of array CCD device[J]. High Power Laser and Particle Beams, 2005, 17.
Citation:
li wen-yu, wang jin-bao, cheng xiang-ai, et al. New analysis on laser-induced damage mechanism of array CCD device[J]. High Power Laser and Particle Beams, 2005, 17.
The SONY ICX055BL visible-light CCD was irradiated by 1 064 nm pulsed laser with the width of 5 ms. In the experiments the video signal was recorded by PC image acquisition card, at the same time the output of ICX055BL was recorded by oscillograph. The damaging mechanism analyses was not limited to MOS part of the CCD which work as the detector, stores and transferrs charge, but took the CCD as a function aggregate. Based on the experimental results and the characters of the CCD device circuit, the IC destruction was due to the circuit damage. That is to say the signal charge packages induced by the pulse laser damaged the reset-FET, which caused the device out of work for ever.