zeng xiong-wen, lu qi-sheng, ma li-qin, et al. Chaos disturbance mechanisms research of extrinsic photoconductors under chaotic laser iradiated[J]. High Power Laser and Particle Beams, 2002, 14.
Citation:
zeng xiong-wen, lu qi-sheng, ma li-qin, et al. Chaos disturbance mechanisms research of extrinsic photoconductors under chaotic laser iradiated[J]. High Power Laser and Particle Beams, 2002, 14.
zeng xiong-wen, lu qi-sheng, ma li-qin, et al. Chaos disturbance mechanisms research of extrinsic photoconductors under chaotic laser iradiated[J]. High Power Laser and Particle Beams, 2002, 14.
Citation:
zeng xiong-wen, lu qi-sheng, ma li-qin, et al. Chaos disturbance mechanisms research of extrinsic photoconductors under chaotic laser iradiated[J]. High Power Laser and Particle Beams, 2002, 14.
Imstotite of Semiconductors the Chinese Academy of Sciences,Beijing 100083,China;Institute of Science,National University of Defence Technology,Changsha 410073,China
Based on the phenomenological theory of semiconductors and two-level model, according to the principle of cascading nonlinear system and by analyzing the Lyapunov exponents of its dynamics equations，the chaos disturbance mechanisms of extrinsic photoconductors are surveyed and demonstrated when chaotic laser irradiated. The numerical results have shown that chaotic laser can make the extrinsic photoconductors to chaos.
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