Experimental study on the characteristics of emiconductor opening switch

su jian-cang; ding yong-zhong; song zhi-min; ding zhen-jie; liu guo-zhi; liu chun-liang

Volume 14 Issue 06

Dec. 2002

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Abstract

References

Article Navigation > High Power Laser and Particle Beams > 2002 > 14(06): 0-

xue chunrong, yi kui, wei chaoyang, et al. Optical properties of vacuum ultraviolet and deep ultraviolet region substrate materials[J]. High Power Laser and Particle Beams, 2009, 21.

Citation:

su jian-cang, ding yong-zhong, song zhi-min, et al. Experimental study on the characteristics of emiconductor opening switch[J]. High Power Laser and Particle Beams, 2002, 14.

xue chunrong, yi kui, wei chaoyang, et al. Optical properties of vacuum ultraviolet and deep ultraviolet region substrate materials[J]. High Power Laser and Particle Beams, 2009, 21.

Citation:

su jian-cang, ding yong-zhong, song zhi-min, et al. Experimental study on the characteristics of emiconductor opening switch[J]. High Power Laser and Particle Beams, 2002, 14.

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Experimental study on the characteristics of emiconductor opening switch

1.
School of Electron and Information Engineering,Xi'an JiaoTong University,Xian 710063,China;
2.
Northwest Institute of Nuclear Technology,P.O.Box 69-26,Xi'an 710024,China

Publish Date: 2002-12-15

Abstract

Abstract

An experimental setup is developed to measure the characteristics of semiconductor opening switch (SOS). The parameters, such as interruption impedance, current interruption time, voltage gain, pulse duration and energy transfer efficiency, are studied experimentally. The experimental results show that forward pumping time and reverse pumping time are important parameters for semiconductor opening switches. The influences of forward pumping time and reverse pumping time on interruption time, voltage gain, and energy transfer efficiency are obtained. In the interruption process, the impedance variation is divided into three phases: that is rapid increasing phase, slow change phase and completely interruption phase.
- semiconductor opening switch,
- pulsed power,
- energy transfer efficiency

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