Volume 17 Issue 01
Jan.  2005
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huang yang-cheng, qiao hui, jia jia, et al. Influence of 1 MeV electron irradiation on HgCdTe photovoltaic detectors[J]. High Power Laser and Particle Beams, 2005, 17.
Citation: huang yang-cheng, qiao hui, jia jia, et al. Influence of 1 MeV electron irradiation on HgCdTe photovoltaic detectors[J]. High Power Laser and Particle Beams, 2005, 17.

Influence of 1 MeV electron irradiation on HgCdTe photovoltaic detectors

  • Publish Date: 2005-01-15
  • In this paper, radiation effects of 1 MeV electron on short wavelength Hg1-xCdxTe photovoltaic detectors have been studied. Response spectrum, currentvoltage characterization and detectivity were measured before and after irradiation to analyze the radiation effects. It's been observed that after irradiation, the response spectra of detectors become narrower at shot wavelength while the peak and cutoff wavelength have no noticeable change. The dark current of devices increases with the irradiation dosage increasing and the detectivity thus decreases.
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      沈阳化工大学材料科学与工程学院 沈阳 110142

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