huang yang-cheng, qiao hui, jia jia, et al. Influence of 1 MeV electron irradiation on HgCdTe photovoltaic detectors[J]. High Power Laser and Particle Beams, 2005, 17.
Citation:
huang yang-cheng, qiao hui, jia jia, et al. Influence of 1 MeV electron irradiation on HgCdTe photovoltaic detectors[J]. High Power Laser and Particle Beams, 2005, 17.
huang yang-cheng, qiao hui, jia jia, et al. Influence of 1 MeV electron irradiation on HgCdTe photovoltaic detectors[J]. High Power Laser and Particle Beams, 2005, 17.
Citation:
huang yang-cheng, qiao hui, jia jia, et al. Influence of 1 MeV electron irradiation on HgCdTe photovoltaic detectors[J]. High Power Laser and Particle Beams, 2005, 17.
In this paper, radiation effects of 1 MeV electron on short wavelength Hg1-xCdxTe photovoltaic detectors have been studied. Response spectrum, currentvoltage characterization and detectivity were measured before and after irradiation to analyze the radiation effects. It's been observed that after irradiation, the response spectra of detectors become narrower at shot wavelength while the peak and cutoff wavelength have no noticeable change. The dark current of devices increases with the irradiation dosage increasing and the detectivity thus decreases.