Influence of 1 MeV electron irradiation on HgCdTe photovoltaic detectors

huang yang-cheng; qiao hui; jia jia; li xiang-yang; gong hai-mei

Volume 17 Issue 01

Jan. 2005

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Article Navigation > High Power Laser and Particle Beams > 2005 > 17(01): 0-

wei lai, cao leifeng, fan wei, et al. Measurement of diffraction properties of photon sieves applied to spectroscopy for soft X-ray[J]. High Power Laser and Particle Beams, 2011, 23.

Citation:

huang yang-cheng, qiao hui, jia jia, et al. Influence of 1 MeV electron irradiation on HgCdTe photovoltaic detectors[J]. High Power Laser and Particle Beams, 2005, 17.

wei lai, cao leifeng, fan wei, et al. Measurement of diffraction properties of photon sieves applied to spectroscopy for soft X-ray[J]. High Power Laser and Particle Beams, 2011, 23.

Citation:

huang yang-cheng, qiao hui, jia jia, et al. Influence of 1 MeV electron irradiation on HgCdTe photovoltaic detectors[J]. High Power Laser and Particle Beams, 2005, 17.

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Influence of 1 MeV electron irradiation on HgCdTe photovoltaic detectors

1.
State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Shanghai 200083,China;
2.
Graduate School of the Chinese Academy of Sciences,Beijing 100039,China

Publish Date: 2005-01-15

Abstract

Abstract

In this paper, radiation effects of 1 MeV electron on short wavelength Hg1-xCdxTe photovoltaic detectors have been studied. Response spectrum, currentvoltage characterization and detectivity were measured before and after irradiation to analyze the radiation effects. It's been observed that after irradiation, the response spectra of detectors become narrower at shot wavelength while the peak and cutoff wavelength have no noticeable change. The dark current of devices increases with the irradiation dosage increasing and the detectivity thus decreases.
- hgcdte,
- photovoltaic detector,
- electron irradiation,
- radiation effect

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