li hong-tao, ding bo-nan, xie wei-ping, et al. 200kV/100kA low jitter ring type field distortion switch[J]. High Power Laser and Particle Beams, 2003, 15.
Citation:
li hong-tao, ding bo-nan, xie wei-ping, et al. 200kV/100kA low jitter ring type field distortion switch[J]. High Power Laser and Particle Beams, 2003, 15.
li hong-tao, ding bo-nan, xie wei-ping, et al. 200kV/100kA low jitter ring type field distortion switch[J]. High Power Laser and Particle Beams, 2003, 15.
Citation:
li hong-tao, ding bo-nan, xie wei-ping, et al. 200kV/100kA low jitter ring type field distortion switch[J]. High Power Laser and Particle Beams, 2003, 15.
This paper reported the results of the investigation of a 200kV/100kA low jtter low prefire probability ring rail field distortion switch. Its jitter was less than 2 ns when its working voltage was larger than 70% of selfbreakdown voltage. When its working voltage was greater than 85% of selfbreakdown voltage its jitter was less than 1ns if the mixture of Ar, N2 and SF6N2, SF6Ar in which the percentage of SF6 was less than 50% was used as dielectric. Its maxium derivation of selfbreakdown voltage was less than 4% of selfbreakdown voltage. It is a multichannel switch and the number of discharging channel was more than 3. The results of selfbreakdown and triggering experiments working with Ar, N2, SF6 and SF6N2, SF6Ar mixtures were introduced．
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