chen yu-xiao, yin xian-dong, tang dan, et al. Design and simulation of 100 ps transient sampling gate based on high speed Schottky diode[J]. High Power Laser and Particle Beams, 2006, 18.
Citation:
chen yu-xiao, yin xian-dong, tang dan, et al. Design and simulation of 100 ps transient sampling gate based on high speed Schottky diode[J]. High Power Laser and Particle Beams, 2006, 18.
chen yu-xiao, yin xian-dong, tang dan, et al. Design and simulation of 100 ps transient sampling gate based on high speed Schottky diode[J]. High Power Laser and Particle Beams, 2006, 18.
Citation:
chen yu-xiao, yin xian-dong, tang dan, et al. Design and simulation of 100 ps transient sampling gate based on high speed Schottky diode[J]. High Power Laser and Particle Beams, 2006, 18.
The picosecond transient sampling gate is mainly applied in laser fusion and high energy physics experiments for single high-speed pulse real-time sampling. A new balanced sampling gate based on monolithic Schottky bridge quad diodes is put forward in this paper as well as its model and circuit design. The circuit simulation shows that the symmetric strobe design ensures that the sampling interval is 100 ps and the sampling gate bandwidth is 4.4 GHz when the strobe pulse width is 100 ps. The gate can be used in multi-beam ultrashort laser pulses sampling.