Mechanism of neutron- and electron-irradiation-induced phenomena of negative capacitance in NPN-BJT

wang jinjun; tian ye; shi ruiying; gong min; wen jingchao; wu xiaoyan

Volume 23 Issue 10

Nov. 2011

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wang jinjun, tian ye, shi ruiying, et al. Mechanism of neutron- and electron-irradiation-induced phenomena of negative capacitance in NPN-BJT[J]. High Power Laser and Particle Beams, 2011, 23.

Citation:

wang jinjun, tian ye, shi ruiying, et al. Mechanism of neutron- and electron-irradiation-induced phenomena of negative capacitance in NPN-BJT[J]. High Power Laser and Particle Beams, 2011, 23.

wang jinjun, tian ye, shi ruiying, et al. Mechanism of neutron- and electron-irradiation-induced phenomena of negative capacitance in NPN-BJT[J]. High Power Laser and Particle Beams, 2011, 23.

Citation:

wang jinjun, tian ye, shi ruiying, et al. Mechanism of neutron- and electron-irradiation-induced phenomena of negative capacitance in NPN-BJT[J]. High Power Laser and Particle Beams, 2011, 23.

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Mechanism of neutron- and electron-irradiation-induced phenomena of negative capacitance in NPN-BJT

1.
College of Physical Science and Technology,Sichuan University,Chengdu 610064,China;
2.
Key Laboratory of Microelectronics Technology of Sichuan Province,College of Physical Science and Technology,Sichuan University,Chengdu 610064,China

Publish Date: 2011-10-15

Abstract

Abstract

The effects of neutron irradiation and electron irradiation on Si NPN-BJT (bipolar junction transistor) were investigated. After neutron irradiation and electron irradiation, the diffusion capacitance of transistor degraded, and even the negative capacitance(NC) phenomenon occurred. After electron irradiation, the barrier capacitance of transistor degraded, but it did not after neutron irradiation. A detailed analysis was made on the degradation mechanism of the junction capacitance after neutron irradiation and electron irradiation. The results indicate that, the defect is the cause of degradation. The defect clusters in transistor induced by both irradiations show as recombination centers, which greatly reduce the concentration and lifetime of minority carriers, giving rise to a serious
- npn transistor,
- negative capacitance,
- neutron irradiation,
- electron irradiation,
- diffusion capacitance,
- barrier capacitance

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