Gated integrator method in the calibration of photoconductive detector

peng cheng-zhi; yu xiao-qi; jin ge; wan chang-chun; yang dong; hu yuan-feng

Volume 18 Issue 03

Mar. 2006

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Article Navigation > High Power Laser and Particle Beams > 2006 > 18(03): 0-

yuan jianqiang, liu hongwei, liu jinfeng, et al. 50 kV semi-insulating GaAs photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2009, 21.

Citation:

peng cheng-zhi, yu xiao-qi, jin ge, et al. Gated integrator method in the calibration of photoconductive detector[J]. High Power Laser and Particle Beams, 2006, 18.

yuan jianqiang, liu hongwei, liu jinfeng, et al. 50 kV semi-insulating GaAs photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2009, 21.

Citation:

peng cheng-zhi, yu xiao-qi, jin ge, et al. Gated integrator method in the calibration of photoconductive detector[J]. High Power Laser and Particle Beams, 2006, 18.

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Gated integrator method in the calibration of photoconductive detector

1.
Department of Modern Physics,University of Science and Technology of China,Hefei 230026,China

Publish Date: 2006-03-15

Abstract

Abstract

To calibrate photoconductive detectors with the synchrotron soft X-ray source, a new method based on gated integration has been proposed. It will replace the high sensitive measurement system based on high performance oscilloscopes and improve the preamplifier, of which the band reaches 2.9 GHz. The sensitivity of the gated integrator is 2.8×10-18 C/bit . The sensitivity dynamic calibration of the diamond detector has been completed at the Beijing Synchrotron Radiation Facility (BSRF) using the new method. A better signal noise rate has been got on the C,Al,Ni,Fe thin filter. The results of the test show that the sample detector is more sensitive on long wave band (50～280 eV) and this method is feasible in principle.
- photoconductive detectors,
- icf,
- calibration,
- gated integration

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