yuan guo-huo, yang huai-min, xu xi, et al. Total ionizing dose effects and hardening techniques of microcircuit FPGA[J]. High Power Laser and Particle Beams, 2006, 18.
Citation:
yuan guo-huo, yang huai-min, xu xi, et al. Total ionizing dose effects and hardening techniques of microcircuit FPGA[J]. High Power Laser and Particle Beams, 2006, 18.
yuan guo-huo, yang huai-min, xu xi, et al. Total ionizing dose effects and hardening techniques of microcircuit FPGA[J]. High Power Laser and Particle Beams, 2006, 18.
Citation:
yuan guo-huo, yang huai-min, xu xi, et al. Total ionizing dose effects and hardening techniques of microcircuit FPGA[J]. High Power Laser and Particle Beams, 2006, 18.
Total ionizing dose effects of Actel FPGA chip A1280XL are analyzed in detail with interrupting dynamic bias voltage and dynamic bias voltage conditions. Experimentation results indicate that bias conditions have a great effect on total ionizing dose effects of FPGA chip. The damage threshold value of FPGA chip is 12.16 Gy(Si) under the dynamic bias voltage condition. The damage threshold value of FPGA chip is 33.2 Gy(Si) under interrupting dynamic bias voltage condition. The chip radiation effects are analyzed for programmable chip inside structure. Available hardening techniques are introduced to improve device radiation hardened total ionizing dose ability, such as using redundance technique for failure check and isolation, selecting proper shield material for shielding the devices.