Volume 18 Issue 09
Sep.  2006
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wang xiang-qi, he ning, feng de-ren, et al. Experimental study on MOSFET pulse modulator[J]. High Power Laser and Particle Beams, 2006, 18.
Citation: wang xiang-qi, he ning, feng de-ren, et al. Experimental study on MOSFET pulse modulator[J]. High Power Laser and Particle Beams, 2006, 18.

Experimental study on MOSFET pulse modulator

  • Publish Date: 2006-09-15
  • The design of the trigger based on complex programmable logic device(CPLD), the driver circuit and the residual current device(RCD) circuit of MOSFET pulse modulator were introduced, and the parallel-switch and inductive-adder MOSFET modulators were experimentally studied. The push-pull output circuit made up of a pair of MOSFETs was used in the driver circuit. The Pspice simulation results indicated that the peak inverse voltage on MOSFET switch could be clamped by RCD. A pulse current with an amplitude of 13 A, a rise time of 20 ns and a flat top time of 80 ns was obtained on the load of 30 Ω when 3 parallel MOSFET modulator was adopted as the switch and the charge voltage was 450 V, while the amplitude of the obtained pulse was 40 A, the rise time 25 ns and flat top time 70 ns on the l
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