yang zhi-an, jin tao, li ying-jun, et al. Radiation-induced interface states of Si-SiO2 by intense pulse X-ray and their annealing[J]. High Power Laser and Particle Beams, 2002, 14.
Citation:
yang zhi-an, jin tao, li ying-jun, et al. Radiation-induced interface states of Si-SiO2 by intense pulse X-ray and their annealing[J]. High Power Laser and Particle Beams, 2002, 14.
yang zhi-an, jin tao, li ying-jun, et al. Radiation-induced interface states of Si-SiO2 by intense pulse X-ray and their annealing[J]. High Power Laser and Particle Beams, 2002, 14.
Citation:
yang zhi-an, jin tao, li ying-jun, et al. Radiation-induced interface states of Si-SiO2 by intense pulse X-ray and their annealing[J]. High Power Laser and Particle Beams, 2002, 14.
School of Science,Jinan University,Shandong Jinan 250022,China;Xinjiang Institute of Physics,the Chinese Academy of Sciences,Xinjiang Urumqi,830011,China;Basic Department,Mining University of China,Beijing 100083,China;
2.
Northwest Institute of Nuclear Technology,Shaanxi Xi’an 710024,China
Intense pulse X-ray is used to irradiate Si-SiO2 interface. Density of Si-SiO2 interface states and its annealing process are measured. Experiment results show that radiation-induced interface traps in Si-SiO2 are increased with dose of intense pulse X-ray. A distribution that density of Si-SiO2 interface states vs. radiation dose is summarized. According to this distribution, radiation impairment effects and mechanism are discussed. Intense pulse X-ray radiation appear following characteristics: (1) Interface states induced by intense radiation are easily saturated. This saturation phenomenon is different from that of common dose radiation. (2) Annealing process shows that the more radiation-induced interface states, the more rapid eliminate these states in annealing process. (3) There ex
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