xie ai-gen, guo sheng-li, li chuan-qi, et al. Device for measuring secondary electron emission yield of insulator[J]. High Power Laser and Particle Beams, 2007, 19.
Citation:
xie ai-gen, guo sheng-li, li chuan-qi, et al. Device for measuring secondary electron emission yield of insulator[J]. High Power Laser and Particle Beams, 2007, 19.
xie ai-gen, guo sheng-li, li chuan-qi, et al. Device for measuring secondary electron emission yield of insulator[J]. High Power Laser and Particle Beams, 2007, 19.
Citation:
xie ai-gen, guo sheng-li, li chuan-qi, et al. Device for measuring secondary electron emission yield of insulator[J]. High Power Laser and Particle Beams, 2007, 19.
A device for measuring secondary electron emission yield of insulator was set up successfully, which was made up of electron gun system, vacuum system and electrical system, the energy band of primary current produced by the device was 0.8~60 keV. By the single-pulse electron gun method, the secondary electron emission yield of polycrystal MgO yield was measured when the primary electron energy band was 0.8~45 keV. In the experimental measurement, the distance from material surface to secondary electron collector was 35 mm, the bias voltage was 45 V. The maximum measured yield of MgO produced by the method of magnetron sputtering was 2.83, which was in the range of 2 to 26, and the corresponding primary electron energy was 980 eV. These results proved that the secondary electron emission y