zhou min, guo qing-gong, huang ka-ma. Effect on peak leakage caused by junction temperature rise in PIN diode limiter[J]. High Power Laser and Particle Beams, 2008, 20.
Citation:
zhou min, guo qing-gong, huang ka-ma. Effect on peak leakage caused by junction temperature rise in PIN diode limiter[J]. High Power Laser and Particle Beams, 2008, 20.
zhou min, guo qing-gong, huang ka-ma. Effect on peak leakage caused by junction temperature rise in PIN diode limiter[J]. High Power Laser and Particle Beams, 2008, 20.
Citation:
zhou min, guo qing-gong, huang ka-ma. Effect on peak leakage caused by junction temperature rise in PIN diode limiter[J]. High Power Laser and Particle Beams, 2008, 20.
A Pspice subcircuit model has been proposed for PIN diode to study the PIN limiter, the electro-thermal diode model including temperature dependences of physical parameters is also described. The relationship between junction temperature and time for input pulse is calculated by FORTRAN with the output data of Pspice code. By tuning a small set of model parameters under different junction temperature, the transient response of PIN diode limiter have been simulated with Pspice, and spike leakage power varying with frequency, pulse rising time ,and temperature are obtained. Results indicate that bigger pulse amplitude causes quicker juction temperature grow and spike leakage power will be augmented by the junction temperature rise under different frequency and pulse rising time.
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