Simulation of extended interaction oscillator

wu zhen-hua; zhang kai-chun; liu sheng-gang

Volume 19 Issue 03

Mar. 2007

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Article Navigation > High Power Laser and Particle Beams > 2007 > 19(03): 0-

wang guizhen, bai xiaoyan, guo xiaoqiang, et al. Transient radiation effects of CMOS circuits with different pulse widths[J]. High Power Laser and Particle Beams, 2009, 21.

Citation:

wu zhen-hua, zhang kai-chun, liu sheng-gang. Simulation of extended interaction oscillator[J]. High Power Laser and Particle Beams, 2007, 19.

wang guizhen, bai xiaoyan, guo xiaoqiang, et al. Transient radiation effects of CMOS circuits with different pulse widths[J]. High Power Laser and Particle Beams, 2009, 21.

Citation:

wu zhen-hua, zhang kai-chun, liu sheng-gang. Simulation of extended interaction oscillator[J]. High Power Laser and Particle Beams, 2007, 19.

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Simulation of extended interaction oscillator

1.
School of Physical Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China

Publish Date: 2007-03-15

Abstract

Abstract

The basic theories, the characteristics and the woking process of the extended interaction oscillator(EIO) were introduced. A type of EIO was simulated using PIC. The effect of the cathode voltage, the radius of the electron beam, the number and the period length of the resonant cavity on the output power, frequency and conversion efficiency were analyzed. The simulation results shown that when the working voltage is 28.5～30 kV, the resonant cavity starts to oscillate. When the input cathode voltage is 29 kV, the current is 10 A, and when the radius of electronic beam is 1.4 mm and the number of period is 4, the output power is 128 kW, the frequency is 12.9 GHz, and the efficiency is up to 37.93%.
- extended interaction oscillator,
- thz band,
- synchronization,
- beam bunching

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