Electron beam lithography based on overlapped increment scanning

A novel electron-beam lithography based on overlapped increment scanning is presented. The impact of the depth and exposure dose on the absorbed energy density, and the relationship between the solution rate and the absorbed energy density are analyzed theoretically. The result shows the more the exposure dose increases, the greater the solution rate becomes. Based on this, seven overlapped increment scanning exposure experiments are conducted on 570 nm PMMA in the SDS-3 electron beam lithography system at 20 keV and distinct three-dimensional structures of the conic of trapezoid and the conic are obtained. It means the overlapped increment scanning can be used to three-dimensional fabrication.