zhan yong-jun, wu wei-dong, wang feng, et al. Microstructure and fabrication of NaF film by pulsed laser deposition[J]. High Power Laser and Particle Beams, 2007, 19.
Citation:
zhan yong-jun, wu wei-dong, wang feng, et al. Microstructure and fabrication of NaF film by pulsed laser deposition[J]. High Power Laser and Particle Beams, 2007, 19.
zhan yong-jun, wu wei-dong, wang feng, et al. Microstructure and fabrication of NaF film by pulsed laser deposition[J]. High Power Laser and Particle Beams, 2007, 19.
Citation:
zhan yong-jun, wu wei-dong, wang feng, et al. Microstructure and fabrication of NaF film by pulsed laser deposition[J]. High Power Laser and Particle Beams, 2007, 19.
NaF films with preferred orientation have been successfully deposited on Si(100) substrate by pulsed laser deposition. The testing of surface profiler indicates that the deposition rate of the film increases exponentially with the increase of the substrate temperature. At the same time, the activation energy of atom is caculated which is 48.67 kJ/mol. Atom force microscope photographes of these films show the mean square root of the film is only 0.553 nm. Scaning electron microscopy cross-section morphology analysis shows a columnar microstructure characterization of the films. X-ray diffraction analysis reveals the face centered constructure of films. The largest average crystallite size of 129.6 nm and the smallest lattice strain of 0.225% appear at 400 ℃.
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