guo shao-feng, cheng xiang-ai, fu xi-quan, et al. Failure of array CCD irradiated by high-repetitive femto-second laser[J]. High Power Laser and Particle Beams, 2007, 19.
Citation:
guo shao-feng, cheng xiang-ai, fu xi-quan, et al. Failure of array CCD irradiated by high-repetitive femto-second laser[J]. High Power Laser and Particle Beams, 2007, 19.
guo shao-feng, cheng xiang-ai, fu xi-quan, et al. Failure of array CCD irradiated by high-repetitive femto-second laser[J]. High Power Laser and Particle Beams, 2007, 19.
Citation:
guo shao-feng, cheng xiang-ai, fu xi-quan, et al. Failure of array CCD irradiated by high-repetitive femto-second laser[J]. High Power Laser and Particle Beams, 2007, 19.
Silicon-CCD is irradiated by 800 nm 100 fs pulsed laser, and the phenomena of saturation, cross-talk and totally damage are observed and corresponding thresholds versus repetitive frequency are measured. Particularly, a new damage phenomenon characterized by a degraded image divided into a bright part and a dark part is observed. Microscope is used to analyze the damage mechanism and it is inferred that the most severe failure could result from the malfunction of CCD circuits because of laser irradiation. Typical results of CCD irradiated by laser out of field of view is also presented.
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