Theoretical and experimental analysis of Schottky barrier diode rectification

This paper presents an improved Schottky barrier diode model, develops a computational program in which the Rung-Kutta method with 4-order accuracy and the iterative method are used, and obtains the graphics of the conversion efficiency. With the same load, as the input power increases from zero, the conversion efficiency increases fast at the lower input power level, and the diode can work at a high conversion efficiency over a broad power range. With the same input power, as the resistance increases from zero, the conversion efficiency increases to the maximum before decreasing, and each input power level corresponds to one optimum resistance. For the same input power and load, the diode conversion efficiency increases by decreasing the operating frequency. A microwave to DC conversion e