Optical properties of TiO2 film after annealing in nitrogen

ju yong-feng; zu xiao-tao; xiang xia

Volume 20 Issue 01

Jan. 2008

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ju yong-feng, zu xiao-tao, xiang xia. Optical properties of TiO2 film after annealing in nitrogen[J]. High Power Laser and Particle Beams, 2008, 20.

Citation:

ju yong-feng, zu xiao-tao, xiang xia. Optical properties of TiO2 film after annealing in nitrogen[J]. High Power Laser and Particle Beams, 2008, 20.

ju yong-feng, zu xiao-tao, xiang xia. Optical properties of TiO2 film after annealing in nitrogen[J]. High Power Laser and Particle Beams, 2008, 20.

Citation:

ju yong-feng, zu xiao-tao, xiang xia. Optical properties of TiO2 film after annealing in nitrogen[J]. High Power Laser and Particle Beams, 2008, 20.

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Optical properties of TiO2 film after annealing in nitrogen

1.
Department of Applied Physics,University of Electronic Science and Technology of China,Chengdu 610054,China

Publish Date: 2008-01-15

Abstract

Abstract

In order to prepare nitrogen-doped TiO2 film in the surface of SiO2 glass, Ti ion implantation was performed at room temperature in fused silica and then the as-implanted samples were annealed in nitrogen ambient up to 900 ℃. SRIM code and Rutherford backscattering spectrometry(RBS) showed a Gauss distribution of Ti ions in the surface of as-implanted samples. The experimental profile of Ti ions is consistent with the simulated one. X-ray photoelectron spectroscopy(XPS) indicated that metallic Ti and TiO2 coexisted in the as-implanted samples. After annealing at 900 ℃, metallic Ti was oxidized into TiO2, and a new compound of O－Ti－N formed because a small amount of oxygen atoms were substituted by nitrogen atoms in the lattice of TiO2. UV-Vis spectra indicated that the optical absorpti
- ion implantation,
- nitrogen-doped tio2 film,
- energy gap,
- annealing

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