Effects of annealing temperature on microstructure and electric properties of Al Films

Al films on quartz wafers were fabricated by DC magnetron sputtering. Surface roughness, crystal structure, stress stress,preferred orientation and reflectivity of Al films were studied by different annealing temperature. The AFM images show that the films are compact and smooth.The X-ray diffraction results indicate that the stress in the Al films was relaxed as annealing temperature increased from room temperature to 400 ℃, and the stress decreased from 1.56 GPa to 0.78 GPa. Microstructure analysis shows that the annealed Al films have the fcc structure, and the mean size of the nanoparticles has increased from 18.3 nm to 25.9 nm with increasing annealing temperature from room temperature to 400 ℃. As the annealing temperature rises, texture coefficient of (200) crystal face increases.