xu yuan, wu dong-jiang, liu yue. Numerical simulation on plasma characteristics of Ge ablated by pulse laser[J]. High Power Laser and Particle Beams, 2007, 19.
Citation:
xu yuan, wu dong-jiang, liu yue. Numerical simulation on plasma characteristics of Ge ablated by pulse laser[J]. High Power Laser and Particle Beams, 2007, 19.
xu yuan, wu dong-jiang, liu yue. Numerical simulation on plasma characteristics of Ge ablated by pulse laser[J]. High Power Laser and Particle Beams, 2007, 19.
Citation:
xu yuan, wu dong-jiang, liu yue. Numerical simulation on plasma characteristics of Ge ablated by pulse laser[J]. High Power Laser and Particle Beams, 2007, 19.
State Key Laboratory for Materials Modification by Laser,Ion and Electron Beams,School of Physics and Optoelectronic Technology,Dalian University of Technology,Dalian 116085,China;
2.
Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education,Dalian University of Technology,Dalian 116085,China;
3.
School of Information Engineering,Huangshan University,Huangshan 245021,China
In the early stage of UV excimer laser ablation of semiconductor, plasma induced by laser ablation was assumed at local thermodynamic equilibrium. One-dimension hydrodynamic model is presented for the laser ablation of Ge in a background gas (He) at 133.32 Pa and the characteristics of plasma induced by Gaussian-shaped KrF laser pulse with wavelength of 248 nm, pulse width of 17 ns, and peak power of 4×108 W/cm2. The results show that the ablated depth arrives 55 nm after laser pulse irradiation. The background gas He is gradually pushed away by the Ge vapor, forming a compression shock wave. And the maximum temperature always locates at the front of the shock wave. Spatial distribution of ionization degrees at different time shows that the first-order ionization degree of Ge always domin
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