Temperature changes in PC-type HgCdTe detector irradiated by in-band and out-of-band laser beams

li li; lu qi-sheng

Volume 20 Issue 06

Jun. 2008

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Article Navigation > High Power Laser and Particle Beams > 2008 > 20(06): 0-

pan ya-feng, peng jian-chang, song xiao-xin, et al. Theoretical research on spiral Blumlein line[J]. High Power Laser and Particle Beams, 2006, 18.

Citation:

li li, lu qi-sheng. Temperature changes in PC-type HgCdTe detector irradiated by in-band and out-of-band laser beams[J]. High Power Laser and Particle Beams, 2008, 20.

pan ya-feng, peng jian-chang, song xiao-xin, et al. Theoretical research on spiral Blumlein line[J]. High Power Laser and Particle Beams, 2006, 18.

Citation:

li li, lu qi-sheng. Temperature changes in PC-type HgCdTe detector irradiated by in-band and out-of-band laser beams[J]. High Power Laser and Particle Beams, 2008, 20.

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Temperature changes in PC-type HgCdTe detector irradiated by in-band and out-of-band laser beams

li li,
lu qi-sheng

1.
College of Optoelectric Science and Engineering,National University of Defense Technology,Changsha 410073,China

Publish Date: 2008-06-15

Abstract

Abstract

A model which combines drift-diffusion equation and heat transmission equation is established. Considering two laser absorption mechanics, including intrinsic carriers interband transition and free carriers inner-band transition, and the interaction of detector temperature and material properties, such as lifetime concentration mobility of carriers and absorption coefficient, the temperature responses in PC-type HgCdTe detector irradiated by in-band and outofband laser beams are calculated. The relationship between laser power density, irradiating time and the temperature rise is discussed．Results show that in-band laser irradiation can increase out-of-band laser absorption, and is an effective way to reduce damage thresholds.
- pc-type hgcdte detector,
- laser irradiating,
- in-band laser,
- out-of-band laser,
- temperature effect

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