Temperature changes in PC-type HgCdTe detector irradiated by in-band and out-of-band laser beams

A model which combines drift-diffusion equation and heat transmission equation is established. Considering two laser absorption mechanics, including intrinsic carriers interband transition and free carriers inner-band transition, and the interaction of detector temperature and material properties, such as lifetime concentration mobility of carriers and absorption coefficient, the temperature responses in PC-type HgCdTe detector irradiated by in-band and outofband laser beams are calculated. The relationship between laser power density, irradiating time and the temperature rise is discussed．Results show that in-band laser irradiation can increase out-of-band laser absorption, and is an effective way to reduce damage thresholds.