li jun-na, qiu ai-ci, kuai bin, et al. Characteristics of capacitance-resistance coupling UV illumination switch[J]. High Power Laser and Particle Beams, 2008, 20.
Citation:
li jun-na, qiu ai-ci, kuai bin, et al. Characteristics of capacitance-resistance coupling UV illumination switch[J]. High Power Laser and Particle Beams, 2008, 20.
li jun-na, qiu ai-ci, kuai bin, et al. Characteristics of capacitance-resistance coupling UV illumination switch[J]. High Power Laser and Particle Beams, 2008, 20.
Citation:
li jun-na, qiu ai-ci, kuai bin, et al. Characteristics of capacitance-resistance coupling UV illumination switch[J]. High Power Laser and Particle Beams, 2008, 20.
A capacitance-resistance coupling UV illumination switch under 300 kV breakdown pulse voltage was designed and studied. The UV illumination structure and circuit parameter are important to the design of the switch. The simulation results indicated that the breakdown matching between UV gap and switch could be achieved with an appropriate capacitance-resistance coupling circuit. Experimental results indicated that the UV illumination time was adjusted effectively when resistance was changed within a certain range. Accordingly, the jitter of the UV illumination switch was decreased by adapting the UV illumination time for the pulse voltage. The jitter of the UV illumination switch was less than 3 ns under pulse voltage with 240 ns risetime , and less than 2 ns under pulse voltage with 36 ns