xu yu-cun, wang xiang-qi, feng de-ren, et al. Fast solid modulator technique based on MOSFET with 6×10 cells[J]. High Power Laser and Particle Beams, 2008, 20.
Citation:
xu yu-cun, wang xiang-qi, feng de-ren, et al. Fast solid modulator technique based on MOSFET with 6×10 cells[J]. High Power Laser and Particle Beams, 2008, 20.
xu yu-cun, wang xiang-qi, feng de-ren, et al. Fast solid modulator technique based on MOSFET with 6×10 cells[J]. High Power Laser and Particle Beams, 2008, 20.
Citation:
xu yu-cun, wang xiang-qi, feng de-ren, et al. Fast solid modulator technique based on MOSFET with 6×10 cells[J]. High Power Laser and Particle Beams, 2008, 20.
Pulse bump orbit technique can realize adjustable interval of Hefei light source HLS light pulse. In order to obtain high-current short pulse with high repeat frequency for the fast kicker, the experimental study based on the MOSFET solid modulator technique was carried out. The designed prototype has the structure of a 10-group MOSFET switch parallel and a 6 level inductive-adder, including fast trigger signal production, power drive circuit’s design, inductive-adder type configuration. The device obtains a pulse output of 100 ns width, 20 kHz repeat rate, 60 A summit current and 2 kV peak voltage．
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