wang li-mei, zeng xin-wu. Molecular dynamics simulation of 266 nm femtosecond laser ablation of monocrystalline silicon[J]. High Power Laser and Particle Beams, 2008, 20.
Citation:
wang li-mei, zeng xin-wu. Molecular dynamics simulation of 266 nm femtosecond laser ablation of monocrystalline silicon[J]. High Power Laser and Particle Beams, 2008, 20.
wang li-mei, zeng xin-wu. Molecular dynamics simulation of 266 nm femtosecond laser ablation of monocrystalline silicon[J]. High Power Laser and Particle Beams, 2008, 20.
Citation:
wang li-mei, zeng xin-wu. Molecular dynamics simulation of 266 nm femtosecond laser ablation of monocrystalline silicon[J]. High Power Laser and Particle Beams, 2008, 20.
Based on Stillinger-Weber(SW) potential and “x-section” model, femtosecond laser ablation of monocrystalline silicon was simulated using molecular dynamics method. Snapshots of ablation process were obtained which showed that the emergence and development of internal defects caused a slice of silicon to be removed from the bulk. Traces of atoms in different sections of ablated material were compared which described the characteristics of atoms under states of liquid, solid and gas. Laser-induced stress wave whose velocity was 8.18 km/s was also observed.
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