li yuandong, wang hongyan, yang zining, et al. Linewidth narrowing of high power diode lasers for alkali vapor laser[J]. High Power Laser and Particle Beams, 2011, 23.
Citation:
li yuandong, wang hongyan, yang zining, et al. Linewidth narrowing of high power diode lasers for alkali vapor laser[J]. High Power Laser and Particle Beams, 2011, 23.
li yuandong, wang hongyan, yang zining, et al. Linewidth narrowing of high power diode lasers for alkali vapor laser[J]. High Power Laser and Particle Beams, 2011, 23.
Citation:
li yuandong, wang hongyan, yang zining, et al. Linewidth narrowing of high power diode lasers for alkali vapor laser[J]. High Power Laser and Particle Beams, 2011, 23.
To avoid the smile effect, which seriously restricts the linewidth narrowing of high power diode laser for alkali vapor laser, a 780 nm single-broad-area high power diode laser was studied. An output beam with 11.5 W power, 61% external cavity efficiency was obtained with the optimized Littman configuration, when the laser run freely at 19 W. When the beam transmitted through a 25 cm long, 110 ℃ Rb vapor cell with 80 kPa ethane, 96.7% power was absorbed. The theory calculation supports the 0.03 nm linewidth (15 GHz spectral width) derived from experimental results.