Development of measurement system for radiation effect on static random access memory based field programmable gate array

yao zhibin; he baoping; zhang fengqi; guo hongxia; luo yinhong; wang yuanming; zhang keying

Volume 21 Issue 05

May 2009

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yao zhibin, he baoping, zhang fengqi, et al. Development of measurement system for radiation effect on static random access memory based field programmable gate array[J]. High Power Laser and Particle Beams, 2009, 21.

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yao zhibin, he baoping, zhang fengqi, et al. Development of measurement system for radiation effect on static random access memory based field programmable gate array[J]. High Power Laser and Particle Beams, 2009, 21.

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Development of measurement system for radiation effect on static random access memory based field programmable gate array

1.
Northwest Institute of Nuclear Technology,P.O.Box 69-10,Xi’an 710024,China

Publish Date: 2009-05-15

Abstract

Abstract

Based on the detailed investigation in field programmable gate array(FPGA) radiation effects theory, a measurement system for radiation effects on static random access memory(SRAM)-based FPGA was developed. The testing principle of internal memory, function and power current was introduced. The hardware and software implement means of system were presented. Some important parameters for radiation effects on SRAM-based FPGA, such as configuration RAM upset section, block RAM upset section, function fault section and single event latchup section can be gained with this system. The transmission distance of the system can be over 50 m and the maximum number of tested gates can reach one million.
- field programmable gate array,
- radiation effects,
- measurement system,
- static random access memory

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