li ming, zhang bin, dai yaping, et al. Tolerance of ion beam etching on multilayer dielectric thin film reflector for spectrum reshaping[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
li ming, zhang bin, dai yaping, et al. Tolerance of ion beam etching on multilayer dielectric thin film reflector for spectrum reshaping[J]. High Power Laser and Particle Beams, 2009, 21.
li ming, zhang bin, dai yaping, et al. Tolerance of ion beam etching on multilayer dielectric thin film reflector for spectrum reshaping[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
li ming, zhang bin, dai yaping, et al. Tolerance of ion beam etching on multilayer dielectric thin film reflector for spectrum reshaping[J]. High Power Laser and Particle Beams, 2009, 21.
Lots of attentions have been paid to spatial distribution, temporal profile, as well as spectrum reshapings in the design of kilojoule petawatt chirped pulse amplification(CPA) systems. The multilayer dielectric thin film reflector fabricated by top-down nano-fabrication processes can be used to realize the spectral reshaping of high power chirped pulses. In the design and fabrication of the reflector, it is necessary to determine the tolerance of ion beam etching appropriately based on the designed reflectivity. Therefore, the analytical expression for the tolerance of ion beam etching has been derived for the multilayer dielectric thin film reflector for spectral reshaping of the chirped pulse laser in the large energy and high power Nd:glass CPA system. The error limitation of ion beam
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