Optical properties of N-doped anatase TiO<sub>2</sub> films prepared by ion implantation

chang dan; chen meng; xiang xia; ju yongfeng; zu xiaotao

Volume 21 Issue 05

May 2009

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Article Navigation > High Power Laser and Particle Beams > 2009 > 21(05): 0-

Hui Hongchao, Guo Yajing, Xiong Zhimin, et al. Evaluation of reliability for image processing of high power laser’s automatic alignment[J]. High Power Laser and Particle Beams, 2013, 25: 867-871.

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chang dan, chen meng, xiang xia, et al. Optical properties of N-doped anatase TiO₂ films prepared by ion implantation[J]. High Power Laser and Particle Beams, 2009, 21.

Hui Hongchao, Guo Yajing, Xiong Zhimin, et al. Evaluation of reliability for image processing of high power laser’s automatic alignment[J]. High Power Laser and Particle Beams, 2013, 25: 867-871.

Citation:

chang dan, chen meng, xiang xia, et al. Optical properties of N-doped anatase TiO₂ films prepared by ion implantation[J]. High Power Laser and Particle Beams, 2009, 21.

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Optical properties of N-doped anatase TiO₂ films prepared by ion implantation

1.
Department of Applied Physics,University of Electronic Science and Technology of China,Chengdu 610054,China

Publish Date: 2009-05-15

Abstract

Abstract

Optical properties of N-doped anatase TiO2 films prepared by N ion implantation have been studied. At first, TiO2 films were prepared by RF magnetron sputtering at different substrate temperatures. Then N ion implantations in the films were conducted at fluences of 5×1016, 1×1017 and 5×1017/cm2, respectively. X-ray diffraction(XRD) results show TiO2 is anatase. X-ray photoelectron spectroscopy(XPS) results reveal that N ions interact with TiO2 particles and form TiOxN2-x compound, which leads to the shift of the absorption edge. Simultaneously, the irradiation defects caused by N ion implantation also increase the absorption intensity of TiO2 films in the range of UV-Visible light．
- tio2 film,
- anatase,
- n doping,
- ion implantation,
- absorption spectrum,
- rf magnetron sputtering

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