hu tao, zhou dongfang, li qingrong, et al. Effect of electronic relaxation process on air breakdown caused by repetition frequency HPM[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
hu tao, zhou dongfang, li qingrong, et al. Effect of electronic relaxation process on air breakdown caused by repetition frequency HPM[J]. High Power Laser and Particle Beams, 2009, 21.
hu tao, zhou dongfang, li qingrong, et al. Effect of electronic relaxation process on air breakdown caused by repetition frequency HPM[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
hu tao, zhou dongfang, li qingrong, et al. Effect of electronic relaxation process on air breakdown caused by repetition frequency HPM[J]. High Power Laser and Particle Beams, 2009, 21.
Air breakdown caused by repetition frequency high power microwave (HPM) has been investigated. The electronic relaxation process affected by repetition frequency pulses has been analyzed, and variations regulation of the electron temperature and free electron density pulsein interval time has been studied, It is found that the electron temperature relaxation time is far less than the electron density relaxation time. This paper analyzes the attachment and recombination effects in the electronic relaxation process, and present the occurrence condition of air breakdown caused by repetition frequency HPM, and the electronic density equation of the air breakdown.