dai ling, qi kangcheng, lin zulun, et al. Fabrication technology of sacrificial layer in LaB6 field emission arrays[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
dai ling, qi kangcheng, lin zulun, et al. Fabrication technology of sacrificial layer in LaB6 field emission arrays[J]. High Power Laser and Particle Beams, 2009, 21.
dai ling, qi kangcheng, lin zulun, et al. Fabrication technology of sacrificial layer in LaB6 field emission arrays[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
dai ling, qi kangcheng, lin zulun, et al. Fabrication technology of sacrificial layer in LaB6 field emission arrays[J]. High Power Laser and Particle Beams, 2009, 21.
This paper analyzes the localization of traditional sacrificial layer material aluminum and brings forward a new sacrificial layer—ZnO-Al complex sacrificial layer. By means of sputtering to prepare aluminum film and evaporating to prepare zinc-oxide film, field emission arrays are fabricated and then tested. The result indicates that ZnO-Al complex sacrificial layer can solve the problem of electrochemistry, the LaB6 field emission array tips with ZnO-Al layer are in good condition and the array maintains field emission characteristics.
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