Current oscillation mechanism on silicon epitaxial planar diode

zhao weidong; feng deren; sun jiankun; long jiaojiao

Volume 22 Issue 07

Jun. 2010

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zhao weidong, feng deren, sun jiankun, et al. Current oscillation mechanism on silicon epitaxial planar diode[J]. High Power Laser and Particle Beams, 2010, 22.

Citation:

zhao weidong, feng deren, sun jiankun, et al. Current oscillation mechanism on silicon epitaxial planar diode[J]. High Power Laser and Particle Beams, 2010, 22.

zhao weidong, feng deren, sun jiankun, et al. Current oscillation mechanism on silicon epitaxial planar diode[J]. High Power Laser and Particle Beams, 2010, 22.

Citation:

zhao weidong, feng deren, sun jiankun, et al. Current oscillation mechanism on silicon epitaxial planar diode[J]. High Power Laser and Particle Beams, 2010, 22.

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Current oscillation mechanism on silicon epitaxial planar diode

1.
School of Electrical Engineering and Information,Anhui University of Technology,Maanshan 243002,China;
2.
National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230029,China

Publish Date: 2010-06-30

Abstract

Abstract

The experiment phenomenon in a small-scale space when a kind of silicon diode is in the over-current state is described and explained through the voltage-regulated switch model. The relaxation oscillation is proved through temporal behavior of the thin-beam drift in a infinite space. Moreover, the simulation made with nonlinear equation mathematical model, which is applicable to chaos, demonstrates that under certain initial normalized current values and parameters, the simulation results are consistent with the experimental phenomena.
- relaxation oscillation,
- voltage-controlled switch,
- virtual cathode,
- drift,
- particle aggregation,
- transit time

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