Volume 17 Issue 04
Apr.  2005
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jiang ji-jun, luo fu, chen jian-guo, et al. Research on femtosecond laser induced damage to CCD[J]. High Power Laser and Particle Beams, 2005, 17.
Citation: jiang ji-jun, luo fu, chen jian-guo, et al. Research on femtosecond laser induced damage to CCD[J]. High Power Laser and Particle Beams, 2005, 17.

Research on femtosecond laser induced damage to CCD

  • Publish Date: 2005-04-15
  • The failure of charge coupled devices (CCD ) irradiated by 800nm fs laser with pulse duration of 60 fs was studied.The result shows that the failure threshold of CCD irradiated by fs laser is 4.22×10-3 J/cm2. and it is 2~3 order lower than the failare threshold of CCD irradiated by ns laser. According to the micro-analysis of CCD, it is found that the damage does not take place at the light activated elements but at the grid electrode of the device.
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