The failure of charge coupled devices (CCD ) irradiated by 800nm fs laser with pulse duration of 60 fs was studied.The result shows that the failure threshold of CCD irradiated by fs laser is 4.22×10-3 J/cm2. and it is 2~3 order lower than the failare threshold of CCD irradiated by ns laser. According to the micro-analysis of CCD, it is found that the damage does not take place at the light activated elements but at the grid electrode of the device.